Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology

Chemical vapor deposition (CVD) processes were developed meeting the stringent requirements for the metallization of inter-chip-vias (ICV) in the vertical integration of chips technology. The metallization is done by highly conformal deposition of a titanium nitride glue layer in vias with extremely...

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Bibliographic Details
Published in:Applied surface science 1995-10, Vol.91 (1), p.382-387
Main Authors: Ruhl, G., Fröschle, B., Ramm, P., Intemann, A., Pamler, W.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Chemical vapor deposition (CVD) processes were developed meeting the stringent requirements for the metallization of inter-chip-vias (ICV) in the vertical integration of chips technology. The metallization is done by highly conformal deposition of a titanium nitride glue layer in vias with extremely high aspect ratios as 7 : 1 and void-free filling of the vias with tungsten.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(95)00151-4