Surface phase transitions of Ge(100) studied via valence band photoemission

Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173K. The c(4x2)- > 2x1 phase transition is accompanied by the shift of a back bond derived surface state. The high temperature 2x1- > 1x1 transition and a further transition at approx1075K are evident a...

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Bibliographic Details
Published in:Surface science 1997-09, Vol.402-404 (1-3), p.871-874
Main Authors: Laine, A D, DeSeta, M, Cepek, C, Vandre, S, Goldoni, A, Franco, N, Avila, J, Asensio, M C, Sancrotti, M
Format: Article
Language:English
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Summary:Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173K. The c(4x2)- > 2x1 phase transition is accompanied by the shift of a back bond derived surface state. The high temperature 2x1- > 1x1 transition and a further transition at approx1075K are evident as discontinuities in the emission intensity at the Fermi level and in the attenuation of a bulk and a surface electronic state.
ISSN:0039-6028