Impenetrable Barrier at the Metal–Mott Insulator Junction in Polymorphic 1H and 1T NbSe2 Lateral Heterostructure

• Published in: The journal of physical chemistry letters 2022-11, Vol.13 (46), p.10713-10721
• Main Authors: Zhang, Huimin, Yan, Chenhui, Ge, Zhuozhi, Weinert, Michael, Li, Lian
• Format: Article
• Language: English
• Subjects: Physical Insights into Quantum Phenomena and Function
• ISSN: 1948-7185; 1948-7185
• DOI: 10.1021/acs.jpclett.2c02546

When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal–Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe2 by molecular beam epitaxy. We find a one-dimensional metallic channel along the interface due to the appearance of quasiparticle states with an intensity decay following 1/x 2, indicating an impenetrable barrier. Near the interface, the Mott gap exhibits a strong spatial dependence arising from the difference in lattice constants between the two phases, consistent with our density functional theory calculations. These results provide clear experimental evidence for an impenetrable barrier at the metal–Mott insulator junction and the high tunability of a Mott insulator by strain.