Fabrication of novel Si double-barrier structures and their characteristics

A novel Si (silicon)-based double-barrier structure (DBS) is newly proposed to study Si resonant tunneling devices. To form a thin Si single-crystal plate as a quantum well, anisotropic wet chemical etching and thermal oxidation are adopted. The DBS has a 43 nm-wide Si quantum well and 2.3 nm-thick...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995-02, Vol.34 (2B), p.860-863
Main Authors: YUKI, K, HIRAI, Y, MORIMOTO, K, INOUE, K, NIWA, M, YASUI, J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
Tunneling
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Summary:A novel Si (silicon)-based double-barrier structure (DBS) is newly proposed to study Si resonant tunneling devices. To form a thin Si single-crystal plate as a quantum well, anisotropic wet chemical etching and thermal oxidation are adopted. The DBS has a 43 nm-wide Si quantum well and 2.3 nm-thick SiO 2 barriers. The electrical characteristic exhibits negative differential conductance (NDC).
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.860