Formation mechanism of p-type surface conductive layer on deposited diamond films

A model of the formation of a p-type surface conductive layer on deposited diamond films is proposed. According to the model, the ionization of acid in water produces oxonium ion ( H 3 O + ) which reacts with hydrogen on diamond films and causes the creation of holes in diamond films. The model also...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995-10, Vol.34 (10), p.5550-5555
Main Authors: RI SUNG GI, MIZUMASA, T, AKIBA, Y, HIROSE, Y, KUROSU, T, IIDA, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electrical and magnetic properties (related to treatment conditions)
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Materials science
Physics
Surface conductivity and carrier phenomena
Treatment of materials and its effects on microstructure and properties
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Summary:A model of the formation of a p-type surface conductive layer on deposited diamond films is proposed. According to the model, the ionization of acid in water produces oxonium ion ( H 3 O + ) which reacts with hydrogen on diamond films and causes the creation of holes in diamond films. The model also explains the disappearance of the p-type surface conductive layer by the action of alkaline substances. The experimental results concerning the change in electrical resistance at the surface of diamond films can be explained using the proposed model.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.5550