High optical power nonlinear dynamic response of AlInAs/GaInAs MSM photodiode

In this paper, we introduce a theoretical study and a numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of an MSM AlInAs/GaInAs photodiode under high-illumination conditions. We also report that, with an MSM operating at 20 GHz, we can exp...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1995-05, Vol.42 (5), p.828-834
Main Authors: Ashour, I.S., Harari, J., Vilcot, J.-P., Decoster, D.
Format: Article
Language:English
Subjects:
Applied sciences
Calculations
Charge carriers
Computer simulation
Dynamic response
Electric breakdown of solids
Electric fields
Electric space charge
Electrodes
Electronics
Exact sciences and technology
Fiber nonlinear optics
Harmonic generation
High speed optical techniques
Mathematical models
Nonlinear optics
Optical modulation
Optical receivers
Optical saturation
Optoelectronic devices
Photodetectors
Photodiodes
Schottky barriers
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we introduce a theoretical study and a numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of an MSM AlInAs/GaInAs photodiode under high-illumination conditions. We also report that, with an MSM operating at 20 GHz, we can expect a saturation limit at a maximum modulated optical power as high as 100 mW.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.381976