Electrical properties of CuPc films prepared by plasma-activated evaporation in N2 and NO(x) environments

CuPc films with good mechanical and chemical resistance were prepared by the plasma-activated evaporation method, and the electrical properties of the films were measured in pure N2 and in 100 ppm NO(x) environments. In N2 environment, the dc conductivity of the film depends on the temperature as e...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995-11, Vol.34 (11), p.6178-6183
Main Authors: Choi, Chang-Gu, Lee, Soonchil, Lee, Wong-Jong
Format: Article
Language:English
Online Access:Get full text
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Summary:CuPc films with good mechanical and chemical resistance were prepared by the plasma-activated evaporation method, and the electrical properties of the films were measured in pure N2 and in 100 ppm NO(x) environments. In N2 environment, the dc conductivity of the film depends on the temperature as e exp -E/kT while the ac conductivity is independent of temperature and proportional to omega exp n, with the exponent n appoximately equal to 0.95. Adsorption of NO(x) gas affects mainly the dc conductivity by forming acceptor states to generate holes, but negligibly affects the ac conductivity. The increment of dc conductivity is related to the amount of adsorbed NO(x) gas molecules, which depends on the temperature and the film morphology. The impedance of CuPc thin film can be reasonably expressed as that of an equivalent circuit consisting of two resistor-capacitor pairs in series corresponding to the grain and the grain boundary. As the exposure time in NO(x) environment increases, the resistances of both grain and grain boundary decrease, while the capacitances do not vary with the exposure time. (Author)
ISSN:0021-4922