Electrode-limited currents in Al-(GeSeTl)-Al thin films

The d.c. conductivity of Al-(GeSe 5) 1− x Tl x −Al thin film samples (0 < x < 20 at.%) has been investigated at high applied electric fields up to 1.10 8Vm −1 at room temperature. From the current-voltage characteristics, the values of the work function at the Al-GeSeTl interface ( X = 0.84 eV...

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Bibliographic Details
Published in:Thin solid films 1995-04, Vol.259 (2), p.270-274
Main Authors: Petkov, P., Vodenicharov, C., Parvanov, S.
Format: Article
Language:English
Subjects:
Band structure
Chalcogens
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Electrical properties and measurements
Exact sciences and technology
Physics
Work function
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Summary:The d.c. conductivity of Al-(GeSe 5) 1− x Tl x −Al thin film samples (0 < x < 20 at.%) has been investigated at high applied electric fields up to 1.10 8Vm −1 at room temperature. From the current-voltage characteristics, the values of the work function at the Al-GeSeTl interface ( X = 0.84 eV), the relative dielectric permittivity of the layers ( ε = 6.67) and the effective electron mass in the conduction band ( m c m =0.29−1.1 ) have been determined. The experimental results agree well with the theory of Christov for injected electron currents.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)06407-5