Microstructural development during diffusion bonding of α-silicon carbide to molybdenum

Silicon carbide was joined to molybdenum by solid state bonding at temperatures ranging from 1200 °C to 1700 °C. The interfaces were characterized by scanning electron microscopy, electron probe microanalysis, and X-ray diffraction. Diffusion of Si and C into Mo resulted in a reaction layer with two...

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Bibliographic Details
Published in:Materials science & engineering. A, Structural materials : properties, microstructure and processing Structural materials : properties, microstructure and processing, 1995-02, Vol.191 (1), p.239-247
Main Authors: Martinelli, A.E., Drew, R.A.L.
Format: Article
Language:English
Subjects:
Applied sciences
Carbide
Condensed matter: structure, mechanical and thermal properties
Diffusion
Diffusion
interface formation
Exact sciences and technology
Metals. Metallurgy
Molybdenum
Physics
Silicon
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Silicon carbide was joined to molybdenum by solid state bonding at temperatures ranging from 1200 °C to 1700 °C. The interfaces were characterized by scanning electron microscopy, electron probe microanalysis, and X-ray diffraction. Diffusion of Si and C into Mo resulted in a reaction layer with two main phases: Mo 5Si 3 and Mo 2C. For temperatures higher than 1400 °C a ternary phase of composition Mo 5Si 3C was also formed, and at 1700 °C nucleation of MoC was observed.
ISSN:0921-5093
1873-4936
DOI:10.1016/0921-5093(94)09633-8