Magnetic properties and gap formation in FeSi

Magnetization, magnetic susceptibility, resistivity, optical reflectivity, and point-contact tunneling measurements were performed on FeSi single crystals. Magnetization measurements revealed a ferromagnetic contribution which was more pronounced below 100K. Magnetic susceptibility, resistivity, far...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 1995-09, Vol.157-158, p.637-638
Main Authors: Timko, M, Mihalik, M, Samuely, P, Tomasovicova-Hudakova, N, Szabo, P, Menovsky, A A
Format: Article
Language:English
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Summary:Magnetization, magnetic susceptibility, resistivity, optical reflectivity, and point-contact tunneling measurements were performed on FeSi single crystals. Magnetization measurements revealed a ferromagnetic contribution which was more pronounced below 100K. Magnetic susceptibility, resistivity, far-infrared and point-contact data were consistent with the characterization of FeSi as a narrow gap semiconductor or Kondo insulator. Fits to the transport data suggest the formation of a gap at about E sub g approx650K, and a fit to the susceptibility data indicated a gap at about E sub g approx1200K. The point-contact gap was filled at about 60K. Optical spectra showed a significant reduction of the low frequency reflectivity below 200K.
ISSN:0304-8853