Magnetoresistance in FeSi films grown by molecular beam epitaxy

We have used molecular beam epitaxy apparatus to grow Fe-Si films. The films were grown by first depositing a nominal 40 Å of Fe, then a nominal thickness of Si, then a further nominal 40 Å of Fe. A plot of the ratio (remanent magnetisation/saturation magnetization) versus nominal Si layer thickness...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 1995-11, Vol.151 (1), p.95-101
Main Authors: Highmore, R.J., Yusu, K., Okuno, S.N., Saito, Y., Inomata, K.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Magnetic properties and materials
Magnetic properties of monolayers and thin films
Magnetic properties of surface, thin films and multilayers
Physics
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Summary:We have used molecular beam epitaxy apparatus to grow Fe-Si films. The films were grown by first depositing a nominal 40 Å of Fe, then a nominal thickness of Si, then a further nominal 40 Å of Fe. A plot of the ratio (remanent magnetisation/saturation magnetization) versus nominal Si layer thickness shows a minimum for a nominal thickness of 25 Å, and a plot of saturation field versus nominal Si thickness has a maximum for a nominal thickness of 20 Å. We find a room temperature magnetoresistance of more than 2% in films with nominal Si layer thicknesses of 20 Å. Raising the temperature causes a decrease in (remanent magnetization/saturation magnetisation) for films with nominal Si thicknesses of 20 Å and 25 Å.
ISSN:0304-8853
DOI:10.1016/0304-8853(95)00398-3