3.6 V 4 W 0.2 cc Si power-MOS-amplifier module for GSM handset phones

A 0.2 cc Si power MOS amplifier module with a 3.6 supply voltage and 4 W output power for a Global System for Mobile (GSM) communications handset phone is developed. This performance was achieved by using new radiofrequency impedance matched circuits for reducing line-loss, area, and for preventing...

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Main Authors: Yoshida, Isao, Katsueda, Mineo, Morikawa, Masatoshi, Matsunaga, Yoshikuni, Fujioka, Tohru, Hotta, Masao, Nunogawa, Yasuhiro, Kobayashi, Kunio, Shimuzu, Shuichi, Nagata, Minoru
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:A 0.2 cc Si power MOS amplifier module with a 3.6 supply voltage and 4 W output power for a Global System for Mobile (GSM) communications handset phone is developed. This performance was achieved by using new radiofrequency impedance matched circuits for reducing line-loss, area, and for preventing oscillation, on the basis of 0.4 mu m high-frequency power MOSFET technology. This technology can be used for designing the main power-amplifier module for global wireless communication at 1 GHz and above.
ISSN:0193-6530