112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers

We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180 GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-/spl mu/m gate length InGaAs/InAlAs HEMT MIMIC technology. The use...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1998-12, Vol.46 (12), p.2553-2559
Main Authors: Agarwal, B., Schmitz, A.E., Brown, J.J., Matloubian, M., Case, M.G., Le, M., Lui, M., Rodwell, M.J.W.
Format: Article
Language:English
Subjects:
Bandwidth
Coplanar waveguides
Cutoff frequency
Gain
HEMTs
Indium phosphide
Optical amplifiers
Propagation losses
Transmission line theory
Transmission lines
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180 GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-/spl mu/m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.739247