112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers

We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180 GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-/spl mu/m gate length InGaAs/InAlAs HEMT MIMIC technology. The use...

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Published in:IEEE transactions on microwave theory and techniques 1998-12, Vol.46 (12), p.2553-2559
Main Authors: Agarwal, B., Schmitz, A.E., Brown, J.J., Matloubian, M., Case, M.G., Le, M., Lui, M., Rodwell, M.J.W.
Format: Article
Language:English
Subjects:
Bandwidth
Coplanar waveguides
Cutoff frequency
Gain
HEMTs
Indium phosphide
Optical amplifiers
Propagation losses
Transmission line theory
Transmission lines
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container_title IEEE transactions on microwave theory and techniques
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creator Agarwal, B.
Schmitz, A.E.
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description We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180 GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-/spl mu/m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers.
doi_str_mv 10.1109/22.739247
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subjects Bandwidth
Coplanar waveguides
Cutoff frequency
Gain
HEMTs
Indium phosphide
Optical amplifiers
Propagation losses
Transmission line theory
Transmission lines
title 112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers
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