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1 M-cell 6 b/cell analog flash memory for digital storage
A flash-EEPROM containing 1M cells with multi-level programming of up to 64 digital levels per cell provides a prototype of a 6 Mb memory with 257 Mb/cm super(2) array density. The chip is fabricated in a standard 3 V 0.5 mu m common-ground NOR flash EEPROM process with channel hot-electron programm...
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Main Authors: | , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Online Access: | Get full text |
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Summary: | A flash-EEPROM containing 1M cells with multi-level programming of up to 64 digital levels per cell provides a prototype of a 6 Mb memory with 257 Mb/cm super(2) array density. The chip is fabricated in a standard 3 V 0.5 mu m common-ground NOR flash EEPROM process with channel hot-electron programming and Fowler-Nordheim tunneling erasing. Using 16 reference devices to store tha analog threshold levels, the chip perfectly retrieves the stored digital data, corresponding to at least 4/5 years equivalent retention at room temperature. At 6 b programming precision, the high-temperature retention time is reduced to roughly the room temperature equivalent of 6 months and is sufficient for specialized applications. |
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ISSN: | 0193-6530 |