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1 M-cell 6 b/cell analog flash memory for digital storage

A flash-EEPROM containing 1M cells with multi-level programming of up to 64 digital levels per cell provides a prototype of a 6 Mb memory with 257 Mb/cm super(2) array density. The chip is fabricated in a standard 3 V 0.5 mu m common-ground NOR flash EEPROM process with channel hot-electron programm...

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Bibliographic Details
Main Authors: Rolandi, P L, Canegallo, R, Chioffi, E, Gerna, D, Guaitini, G, Issartel, C, Lhermet, F, Pasotti, M, Kramer, A
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:A flash-EEPROM containing 1M cells with multi-level programming of up to 64 digital levels per cell provides a prototype of a 6 Mb memory with 257 Mb/cm super(2) array density. The chip is fabricated in a standard 3 V 0.5 mu m common-ground NOR flash EEPROM process with channel hot-electron programming and Fowler-Nordheim tunneling erasing. Using 16 reference devices to store tha analog threshold levels, the chip perfectly retrieves the stored digital data, corresponding to at least 4/5 years equivalent retention at room temperature. At 6 b programming precision, the high-temperature retention time is reduced to roughly the room temperature equivalent of 6 months and is sufficient for specialized applications.
ISSN:0193-6530