Bulk diffusion and trapping of charges in sapphire doped with various metals

Various metals such as Cu, Ag, Cr, and Mg have been deposited on a polished surface of an alpha -alumina single crystal. After diffusion annealings, the penetration profiles have been obtained by SIMS analysis and the diffusion parameters, specially activation energies, have been calculated. The spa...

Full description

Saved in:
Bibliographic Details
Published in:Materials for Advanced Metallization (MAM), European Workshop European Workshop, 1998-06, Vol.54 (287), p.722-725
Main Authors: Juve, D, Paulhe, O, Gontier-Moya, E, Moya, F
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Various metals such as Cu, Ag, Cr, and Mg have been deposited on a polished surface of an alpha -alumina single crystal. After diffusion annealings, the penetration profiles have been obtained by SIMS analysis and the diffusion parameters, specially activation energies, have been calculated. The space charge formation has been characterized on the same samples using a SEM. A good correlation has been obtained between the ability of trapping and the activation energy of diffusion. The impurity that diffuses with the smallest energy (Mg) increases the trapping ability of the sapphire and conversely (Ag).
ISSN:1266-0167