Band-gap energy anomaly observed in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy

Red shifts in photoluminescence (PL) peaks have been observed for Al 0.25Ga 0.75As grown by atomic hydrogen (H)-assisted molecular beam epitaxy (MBE) by an amount of as large as ~80 meV compared to those grown without atomic H. From absorption spectra measurements, the observed red shifts for with a...

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Bibliographic Details
Published in:Solid-state electronics 1998-07, Vol.42 (7), p.1565-1568
Main Authors: Jang, Kee-Youn, Okada, Yoshitaka, Kawabe, Mitsuo
Format: Article
Language:English
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Summary:Red shifts in photoluminescence (PL) peaks have been observed for Al 0.25Ga 0.75As grown by atomic hydrogen (H)-assisted molecular beam epitaxy (MBE) by an amount of as large as ~80 meV compared to those grown without atomic H. From absorption spectra measurements, the observed red shifts for with atomic H case were due to changes in the band-gap energies, and not due to changes in Al compositions nor formation of new H-related emission centers. It is thought that possible cause of the observed band-gap anomaly is related with spontaneous formation of an ordered superlattice during atomic H-assisted MBE.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(98)00072-0