Enhanced chemical vapor deposition of copper from (hfac)Cu(TMVS) using liquid coinjection of TMVS

• Published in: Journal of the Electrochemical Society 1995-03, Vol.142 (3), p.939-944
• Main Authors: PETERSEN, G. A, PARMETER, J. E, APBLETT, C. A, GONZALES, M. F, SMITH, P. M, OMSTEAD, T. R, NORMAN, J. A. T
• Format: Article
• Language: English
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2048562

A direct liquid coinjection system has been applied to the chemical vapor deposition of copper using the commercially available Cu(I) precursor (hfac)Cu(TMVS), where hfac=1,1,1,5,5,5,-hexafluoroacetylacetonate and TMVS=trimethylvinyl-silane. Precursor delivery was enhanced through the use of a coinjection system wherein additional TMVS was mixed with the copper precursor before injection into the vaporization chamber. The results reported demonstrate the capability of depositing blanket Cu of high purity (on the order of 99.99% Cu) and low resistivity (1.85plus/minus0.1 Omega -cm). These Cu films have been deposited at rates up to exceeding 1500A /min. The effects of temperature and carrier gas on deposition rate and resistivity are examined. The as-deposited films demonstrate a dependence of grain size with thickness and little structural or morphological change with annealing. This study suggests that liquid coinjection is an effective method for enhancing deposition rates and for producing high quality Cu films from Cu(I) precursors.