Influences of Sb on the growth and properties of CuInSe2 thin films

• Published in: Japanese Journal of Applied Physics 1995, Vol.34 (2B), p.1109-1112
• Main Authors: TSENG, B.-H, CHANG, G.-W, LIN, S.-B
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other inorganic semiconductors; Other semiconductors; Physics
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.34.1109

The growth of CuInSe2 film in the presence of an Sb beam results in a great improvement in surface morphology and grain structure. It is attributed to the surfactant modified growth caused by the Sb atoms. A p-type CuInSe2 film with a resistivity of about 0.05 ohm-cm was obtained, which is comparable with the resistivity of a Cu-rich film grown without Sb. Photoluminescence measurements also show that the luminescence intensity of the films grown with Sb is much higher than that of the films grown without Sb having similar compositions. It is probably due to the improvement in the grain structure as well as the crystallinity within the grains. (Author)