Activation parameters for dislocation glide in alpha -SiC

The critical resolved shear stress for activating the < 2110 > (0001) slip system of monocrystalline alpha -SiC (6H and 4H polytypes) has been determined as a function of test temperature and strain rate via constant-displacement compression tests. Tests were conducted at temperatures between...

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Bibliographic Details
Published in:International journal of refractory metals & hard materials 1998-03, Vol.16 (406), p.277-289
Main Authors: Pirouz, P, Samant, A V
Format: Article
Language:English
Online Access:Get full text
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Summary:The critical resolved shear stress for activating the < 2110 > (0001) slip system of monocrystalline alpha -SiC (6H and 4H polytypes) has been determined as a function of test temperature and strain rate via constant-displacement compression tests. Tests were conducted at temperatures between 550-1300 deg C and strain rates between 3.1x10 exp -5 s exp -1 and 6.5x10 exp -4 s exp -1 . The current study shows that alpha -SiC crystals can be plastically deformed via relatively modest resolved shear stresses on the basal plane at temperatures as low as 550 deg C. Two different methods to determine the activation parameters for dislocation glide have been examined. Transmission electron microscopy (TEM) was used to rationalize some of results.
ISSN:0263-4368