Co salicide technology

Ti, Pt, Ni, and Co salicide processes are applied to 0.1‐µm CMOS devices and the problems and possibilities are discussed. Co salicide technology is an especially promising process. The mechanisms of the resistance fluctuations and junction leakage current appearing in the conventional Co salicide p...

Full description

Saved in:
Bibliographic Details
Published in:Electronics & communications in Japan. Part 2, Electronics Electronics, 1998-11, Vol.81 (11), p.26-33
Main Author: Goto, Ken-ichi
Format: Article
Language:English
Subjects:
CMOS
junction leak
salicide
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ti, Pt, Ni, and Co salicide processes are applied to 0.1‐µm CMOS devices and the problems and possibilities are discussed. Co salicide technology is an especially promising process. The mechanisms of the resistance fluctuations and junction leakage current appearing in the conventional Co salicide processes are identified and solution methods are presented. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(11): 26–33, 1998
ISSN:8756-663X
1520-6432
DOI:10.1002/(SICI)1520-6432(199811)81:11<26::AID-ECJB4>3.0.CO;2-I