Initial growth of GaAs on vicinal Si(111) substrates by molecular-beam epitaxy

GaAs grown on vicinal Si(111) substrates by molecular-beam epitaxy showed a phenomenon peculiar to a (111) interface due to bond-matching during the initial growth stage (layer thickness ( t ), t ≤200 nm), accompanying the growth of GaAs islands with perfect-crystalline quality. The best full-width...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995, Vol.34 (10A), p.L1251-L1253
Main Author: YODO, T
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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Summary:GaAs grown on vicinal Si(111) substrates by molecular-beam epitaxy showed a phenomenon peculiar to a (111) interface due to bond-matching during the initial growth stage (layer thickness ( t ), t ≤200 nm), accompanying the growth of GaAs islands with perfect-crystalline quality. The best full-width at half-maximum of (111) GaAs X-ray diffraction in GaAs layers on vicinal Si(111) tilted by 6° toward the [01̄1] direction was 100 arc.s. at a layer thickness of 200 nm.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.l1251