Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots

We investigate the capacitance–voltage, C(V), characteristics of a series of single-barrier n–i–n GaAs/AlAs/GaAs heterostructures incorporating a layer of self-assembled InAs quantum dots in the AlAs barrier. These results are compared with the C(V) of a control sample that has no InAs. Analysis pro...

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Bibliographic Details
Published in:Solid-state electronics 1998-07, Vol.42 (7), p.1293-1295
Main Authors: Martin, P.M., Belyaev, A.E., Eaves, L., Main, P.C., Sheard, F.W., Ihn, T., Henini, M.
Format: Article
Language:English
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Summary:We investigate the capacitance–voltage, C(V), characteristics of a series of single-barrier n–i–n GaAs/AlAs/GaAs heterostructures incorporating a layer of self-assembled InAs quantum dots in the AlAs barrier. These results are compared with the C(V) of a control sample that has no InAs. Analysis provides detailed information about the charge distribution and validates our model for the tunnel current–voltage characteristics of these devices. We find that the negative charge associated with electron filling of the dots is closely compensated by positive charge in the AlAs barrier, which we ascribe to ionised defects or impurities, possibly in association with the quantum dots.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(98)00019-7