Deposition and properties of highly (100)-oriented barium titanate thin films on LaNiO3 electrode

• Published in: Ceramics international 2000-07, Vol.26 (6), p.599-603
• Main Authors: WU, T.-B, SHY, H.-J
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Insulators; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/s0272-8842(99)00103-0

Highly crystallised and (100)-oriented barium titanate thin films having a composition of Ba(Zr0.12Ti0.88)O3 were deposited on (100)- textured LaNiO3 by rf magnetron sputtering at temperatures from 300 to 550 C. The films had a very flat interface which was epitaxially bonded to the LaNiO3. The film deposited on Pt was only weakly crystallised and had a rugged film/electrode interface. A dielectric constant of around 220-270 was achieved for films 50 nm thick when deposited on LaNiO3 at temperatures of 400-550 C, while a much lower dielectric constant was obtained for those deposited on Pt. The films showed a very good insulating characteristic against biasing voltage as compared to film deposited on Pt electrode. A leakage current density of less than 10 exp(-9) A/cm2 was maintained before reaching an onset voltage as high as 5 V. The current emission of the thin films deposited on LaNiO3 followed the relation of Schottky emission, and a high Schottky barrier of 0.73 eV was evaluated from the temperature dependence of current emission. 10 refs.