Antiferroelectric lead zirconate thin films derived from acetate precursors

• Published in: Journal of materials science 1995-03, Vol.30 (5), p.1386-1390
• Main Authors: LI, K. K, WANG, F, HAERTLING, G. H
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Niobates, titanates, tantalates, pzt ceramics, etc; Physics
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1007/BF00356149

Antiferroelectric PBZrO3 films derived from acetate precursors were fabricated on Pt/Ti-coated Si wafers and fused SiO2 at 700 C using an automatic dip-coating process. Films formed directly on the metallised Si wafer showed the coexistence of perovskite and pyrochlore phases. A pre-coated TiO2 layer of about 10 nm facilitated the formation of the desired perovskite phase. Films deposited on fused SiO2 exhibited interactions between Pb and SiO2 which inhibited the crystallisation of the films. In this case, a pre-coated TiO2 layer in the range 50-75 nm acted as a diffusion barrier layer, allowing the formation of the perovskite phase. Antiferroelectricity in the films was confirmed by x-ray superstructure, dielectric double hysteresis loops and d.c. bias behaviour at room temperature. The corresponding transverse electro optic properties were also measured for films deposited on fused SiO2. 22 refs.