Interfacial energy calculation at interconnect-metal/barrier-metal interfaces for grain orientation control

The interfacial energy of interconnect-metal/barrier-metal interfaces in ultralarge-scale integrations have been investigated numerically by assuming a simple additive interaction potential within a rigid-lattice approximation. The calculation gave some noteworthy results: Al prefers the (111) orien...

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Bibliographic Details
Published in:Journal of applied physics 1995-03, Vol.77 (6), p.2454-2461
Main Authors: Nakasaki, Yasushi, Minamihaba, Gaku, Suguro, Kyoichi, Itow, Hitoshi
Format: Article
Language:English
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Summary:The interfacial energy of interconnect-metal/barrier-metal interfaces in ultralarge-scale integrations have been investigated numerically by assuming a simple additive interaction potential within a rigid-lattice approximation. The calculation gave some noteworthy results: Al prefers the (111) orientation on a TiN(111) plane, but Cu did not have such a strong preference. Al(111) can be expected to show strong epitaxial growth on VNx(111), as did Cu on Nb(110). On the basis of the calculations, a Cu/Nb bilayered structure was sputter deposited sequentially by dc magnetron sputtering and examined for crystalline orientation by x-ray-diffraction analysis. Cu exhibited strong (111) orientation preference, and a narrow full width at half-maximum in (111) rocking angle around the substrate normal.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.358773