Distribution of components in epitaxial graded band gap heterostructures Cd(Mn,Zn)Te – Cd(Mn,Zn)HgTe and their photoelectrical properties

CdMnTe-CdMnHgTe, CdZnTc-CdZnHgTe heterocompositions were fabricated by vapor phase epitaxy. An increase of their photosensitivity in comparison with the CdTeCdHgTe structure is explained by the removal of deformation stresses due to the introduction of an isovalent component (Mn, Zn) of smaller size...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 1998-10, Vol.1 (1), p.75-81
Main Author: Vlasenko, O. I.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:CdMnTe-CdMnHgTe, CdZnTc-CdZnHgTe heterocompositions were fabricated by vapor phase epitaxy. An increase of their photosensitivity in comparison with the CdTeCdHgTe structure is explained by the removal of deformation stresses due to the introduction of an isovalent component (Mn, Zn) of smaller size and a reduction of the recombination of nonequilibrium charge carriers in the film. An increase in photosensitivity in the vicinity of the metallurgical boundary in the CdMnTe-CdMnHgTe structure with an increase in Mn content up to 0.08 in comparison to the CdZnTe-CdZnHgTe structure is related to a more precise matching of the lattices of the initial materials. Other models of this phenomenon are also discussed. By comparing the experimental and calculated profiles of the component distribution, the values of the diffusion coefficient in the substrate and the growing film are obtained. (Author)
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo1.01.075