Effect of H2/O2 ratio on the GeO2 concentration profile in SiO2:GeO2 glass preforms prepared by vapor-phase axial deposition

GeO2 radial concentration in SiO2 glass preforms, prepared by vapor-phase axial deposition (VAD) method, was analyzed by XRF measurements. The results were used to evaluate the effect of the H2/O2 ratio used during the deposition process in the formation of the GeO2 concentration profile. Considerin...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2000, Vol.273 (1-3), p.252-256
Main Authors: CUEVAS, R. F, GUSKEN, E, SEKIYA, E. H, OGATA, D. Y, TORIKAI, D, SUZUKI, C. K
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Fabrication, cladding, and splicing
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
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Summary:GeO2 radial concentration in SiO2 glass preforms, prepared by vapor-phase axial deposition (VAD) method, was analyzed by XRF measurements. The results were used to evaluate the effect of the H2/O2 ratio used during the deposition process in the formation of the GeO2 concentration profile. Considering four different H2/O2 ratios, GeO2 distribution was observed to decrease monotonically with the increasing radius for H2/O2 less than or equal to 1.5, and the acute shape around the core center of the GeO2 concentration profile, decreased with increasing H2/O2 ratio. When the ratio H2/O2=2.5, the central doping of GeO2 was minimal, and a constant distribution was obtained along glass preform radii. The results seem to indicate that the control of spatial distribution in the concentration of GeO2 deposited is favorable for the ratio H2/O2 less than or equal to 1.5. 10 refs.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(00)00134-4