Effective method for evaluation of semiconductor laser quality

The measurements of one hundred 1.3 μm planar buried crescent (PBC) structure InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconduc...

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Bibliographic Details
Published in:Microelectronics and reliability 2000-02, Vol.40 (2), p.333-337
Main Authors: Li, Hongyan, Qi, Liyun, Shi, Jiawei, Jin, Enshun, Li, Zhengting, Gao, Dingsan, Yu, Jinzhong, Guo, Liang
Format: Article
Language:English
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Summary:The measurements of one hundred 1.3 μm planar buried crescent (PBC) structure InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconductor lasers effectual. By measurement of electrical derivative curves one can evaluate the quality of epitaxial wafer and chip, find the problems in the material and the technology, offer the useful information on increasing the quality and improving the technology of devices.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(99)00205-X