Effects of the emitter-base effective-mass difference on the collector current in InP/InGaAs HBTs: A Monte Carlo study

The abrupt heterojunction of InP/InGaAs heterojunction bipolar transistors forms a spike in the conduction band edge, which is responsible for the collector current limitation at medium–high bias voltages. Charge transport through the heterojunction interface is usually described, according to Grinb...

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Published in:Microelectronic engineering 2000, Vol.51, p.415-424
Main Authors: Garcias-Salvà, Pau, López-González, J.M, Prat, Lluı́s
Format: Article
Language:English
Subjects:
Electron transmission coefficient
InP/InGaAs heterojunction bipolar transistors (HBTs)
Monte Carlo simulation
Transverse kinetic energy
Tunnel current
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López-González, J.M
Prat, Lluı́s
description The abrupt heterojunction of InP/InGaAs heterojunction bipolar transistors forms a spike in the conduction band edge, which is responsible for the collector current limitation at medium–high bias voltages. Charge transport through the heterojunction interface is usually described, according to Grinberg’s model, by thermionic emission and tunnelling transmission, whereas drift-diffusion is assumed in the rest of the device. This model ignores non-local transport effects and fails for narrow bases. We present alternative Monte Carlo simulation results. The simulator includes the exact resolution of Schrödinger’s equation (avoiding the usual WKB approximation in the transmission coefficient) and takes into account the effective-mass spatial variation.
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subjects Electron transmission coefficient
InP/InGaAs heterojunction bipolar transistors (HBTs)
Monte Carlo simulation
Transverse kinetic energy
Tunnel current
title Effects of the emitter-base effective-mass difference on the collector current in InP/InGaAs HBTs: A Monte Carlo study
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