Effect of coupling of radio-frequency plasma on the growth of diamond films in a hot filament reactor

Diamond films have been deposited using a chemical vapour deposition (CVD) technique involving a hybridization of the hot filament and the capacitively coupled radio-frequency (RF) plasma. The changes produced in the surface morphology and Raman spectra of these films are investigated as a function...

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Bibliographic Details
Published in:Thin solid films 1998-06, Vol.322 (1), p.167-176
Main Authors: Pai, M.P., Musale, D.V., Kshirsagar, S.T., Mitra, A., Sainkar, S.R.
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Chemical vapour deposition (CVD)
Cross-disciplinary physics: materials science
rheology
Diamond
Exact sciences and technology
Glow discharge
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Raman scattering
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Summary:Diamond films have been deposited using a chemical vapour deposition (CVD) technique involving a hybridization of the hot filament and the capacitively coupled radio-frequency (RF) plasma. The changes produced in the surface morphology and Raman spectra of these films are investigated as a function of the magnitude of RF power and deposition chamber pressure. The coupling of low levels of RF power with the hot filament CVD is observed to improve the growth rate as well as quality of the diamond films while higher levels of RF power decreased the growth rate and produced porous films containing needle-shaped microcrystals. These changes are attributed to the ion bombardment of the growing film due to the self-biasing effect of the RF plasma.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)00921-8