Effects of Individual Layer Thickness on the Structure and Electrical Properties of Sol-Gel-Derived Ba0.8Sr0.2TiO3 Thin Films

Ba0.8Sr0.2TiO3 thin films were prepared with various individual layer thicknesses using a sol–gel process. The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed s...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2000-10, Vol.83 (10), p.2616-2618
Main Authors: Cheng, Jian-Gong, Meng, Xiang-Jian, Tang, Jun, Guo, Shao-Ling, Chu, Jun-Hao, Wang, Min, Wang, Hong, Wang, Zhuo
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Domain structure
hysteresis
Exact sciences and technology
Ferroelectricity and antiferroelectricity
Physics
sol-gel
thin films
titanates
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Summary:Ba0.8Sr0.2TiO3 thin films were prepared with various individual layer thicknesses using a sol–gel process. The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature‐independent dielectric constant, and no ferroelectricity. The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good ferroelectricity, and two dielectric peaks in the dielectric constant–temperature curve. The individual layer thickness for layer‐by‐layer homoepitaxy growth that resulted in columnar grains was
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.2000.tb01599.x