Effect of Pb Content in Target on Electrical Properties of Laser Ablation Derived Lead Zirconate Titanate Thin Films

Thin films of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) 1.8–2.0 µm thick on a Pt/Ti/SiO 2 /Si substrate were prepared by excimer laser ablation and were crystallized by subsequent annealing. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composi...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000, Vol.39 (9S), p.5413-5417
Main Authors: Wang, Zhan-Jie, Kikuchi, Kaoru, Maeda, Ryutaro
Format: Article
Language:English
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Summary:Thin films of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) 1.8–2.0 µm thick on a Pt/Ti/SiO 2 /Si substrate were prepared by excimer laser ablation and were crystallized by subsequent annealing. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), respectively. The effect of the Pb content of the target on electrical properties of PZT thin films was investigated. The PZT films with a well-crystallized perovskite phase were obtained by adding 20 wt.% excess PbO to the target and annealing at 750°C for 90 min. The remanent polarization and the coercive field of this 0.8 µm think film were 23.6 µC/cm 2 and 60.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 935 and 0.04, respectively.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.5413