Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance

Several 0.35 μm n-MOSFETs with different gate geometry were analyzed to maximize the RF performance, after that the pads were shielded to ground to reduce the noise contribution of pads. The F min of 0.5 dB was improved by utilizing the ground-shielded pads, and the F min of 0.2 dB was improved by u...

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Bibliographic Details
Published in:IEEE electron device letters 2000-12, Vol.21 (12), p.607-609
Main Authors: Cheon Soo Kim, Jung-Woo Park, Hyun Kyu Yu, Cho, H.
Format: Article
Language:English
Subjects:
Atherosclerosis
Bonding
CMOS technology
Geometry
Low-noise amplifiers
MOSFET circuits
Noise reduction
Performance analysis
Radio frequency
Radiofrequency amplifiers
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Summary:Several 0.35 μm n-MOSFETs with different gate geometry were analyzed to maximize the RF performance, after that the pads were shielded to ground to reduce the noise contribution of pads. The F min of 0.5 dB was improved by utilizing the ground-shielded pads, and the F min of 0.2 dB was improved by using the double-sided gate contact type. The n-MOSFET having the single-sided gate contact and ground-shielded pad showed the F min of 0.46 dB and 0.37 dB at 2 GHz with the drain current of 2.0 mA and 5.3 mA, respectively. Furthermore, the weak frequency dependency of the F min showed a great possibility of a low noise amplifier above 5 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.887481