High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors

GaN Bipolar Junction Transistors and GaN/AlGaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250–300°C and power densities >10 kW cm −2. The breakdown voltage in both types of devices decreased at higher temperatures, with less degradation in the BJTs. At low current...

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Bibliographic Details
Published in:Solid-state electronics 2000-04, Vol.44 (4), p.649-654
Main Authors: Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J, Ren, F, Dang, G, Zhang, A.P, Abernathy, C.R, Pearton, S.J
Format: Article
Language:English
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Summary:GaN Bipolar Junction Transistors and GaN/AlGaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250–300°C and power densities >10 kW cm −2. The breakdown voltage in both types of devices decreased at higher temperatures, with less degradation in the BJTs. At low current levels, the offset voltages were 2–3 V but increased at higher currents.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(99)00291-9