Ge thin film growth on Si(111) surface using hydrogen surfactant

We have investigated the atomic hydrogen (H)-surfactant mediated growth of Ge on Si(111) surface, using coaxial impact-collision ion scattering spectroscopy (CAICISS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning electron microscopy (SEM). It has been found that the Ge th...

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Bibliographic Details
Published in:Thin solid films 2000-07, Vol.369 (1-2), p.25-28
Main Authors: FUJINO, T, FUSE, T, RYU, J.-T, INUDZUKA, K, NAKANO, T, GOTO, K, YAMAZAKI, Y, KATAYAMA, M, OURA, K
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vacuum deposition
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Summary:We have investigated the atomic hydrogen (H)-surfactant mediated growth of Ge on Si(111) surface, using coaxial impact-collision ion scattering spectroscopy (CAICISS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning electron microscopy (SEM). It has been found that the Ge thin film on the Si(111)1x1-H surface is flattened by the H-surfactant, whilst on the Si(111)7x7 surface the flatness does not change in spite of supplying H. These results indicate that the flatness of the Ge thin film is strongly influenced by the structure of the Si(111) substrate surface at the initial stage of Ge thin film growth.
ISSN:0040-6090
DOI:10.1016/s0040-6090(00)00828-2