Light-induced creation and annihilation of two types of dangling bonds in a-Si:H: their relative densities during illumination

We present a new model of light-induced creation of two types of dangling bonds, i.e. normal dangling bonds and hydrogen-related dangling bonds, in a-Si:H. We can account for the result that main dangling bonds are normal dangling bonds in high-quality samples, while both types of dangling bonds exi...

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Bibliographic Details
Published in:Solid state communications 2000-01, Vol.114 (2), p.69-74
Main Authors: Morigaki, K, Hikita, H
Format: Article
Language:English
Subjects:
A. Disordered systems
A. Semiconductors
Amorphous semiconductors, metals, and alloys
C. Point defects
Condensed matter: structure, mechanical and thermal properties
D. Recombination and trapping
Defects and impurities in crystals
microstructure
Disordered solids
Exact sciences and technology
Kinetics of defect formation and annealing
Physics
Structure of solids and liquids
crystallography
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Summary:We present a new model of light-induced creation of two types of dangling bonds, i.e. normal dangling bonds and hydrogen-related dangling bonds, in a-Si:H. We can account for the result that main dangling bonds are normal dangling bonds in high-quality samples, while both types of dangling bonds exist in low-quality samples containing a large amount of hydrogen.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(00)00009-0