High performance 0.04 micron PMOSFET

We describe a high-performance 0.04-micron PMOSFET with a 7-nm-deep ultrashallow junction. An ultralow energy implantation of B10H14(+) at 2 keV (with effective boron energy of 0.2 keV), which does not cause transient-enhanced diffusion, is employed for extension formation. To prevent thermal diffus...

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Bibliographic Details
Published in:Fujitsu scientific & technical journal 1998-12, Vol.34 (2), p.135-141
Main Authors: Goto, Ken-ichi, Sugii, Toshihiro, Matsuo, Jiro
Format: Article
Language:English
Online Access:Get full text
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Summary:We describe a high-performance 0.04-micron PMOSFET with a 7-nm-deep ultrashallow junction. An ultralow energy implantation of B10H14(+) at 2 keV (with effective boron energy of 0.2 keV), which does not cause transient-enhanced diffusion, is employed for extension formation. To prevent thermal diffusion, we developed a two-step activation annealing process (2-step AAP) that forms a shallow extension with low temperature annealing after deep source and drain formation. A maximum drive current of 0.40 mA/micron was achieved, and the smallest PMOSFET has been demonstrated for the first time. We also achieved a low S/D series resistance Rsd of 760 ohms/micron, even when high sheet resistance is applied to the extension regions. (Author)
ISSN:0016-2523