Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass

Polycrystalline silicon (poly-Si) films were fabricated on glass by very high-frequency plasma-enhanced CVD from a gaseous mixture of SiF4 and H2 with small amounts of SiH4. The film orientations were controlled by the selection of the SiF4/H2 flow rate ratio. Their transport properties were evaluat...

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Bibliographic Details
Published in:Key engineering materials 2000-01, Vol.181-182, p.125-128
Main Authors: Suemasu, Atsushi, Shimizu, Isamu, Ro, Kazuyoshi, Fortmann, Charles M., Kamiya, Toshio, Nakahata, Kouichi, Sameshima, Toshiyuki
Format: Article
Language:English
Online Access:Get full text
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Summary:Polycrystalline silicon (poly-Si) films were fabricated on glass by very high-frequency plasma-enhanced CVD from a gaseous mixture of SiF4 and H2 with small amounts of SiH4. The film orientations were controlled by the selection of the SiF4/H2 flow rate ratio. Their transport properties were evaluated either by Hall measurement or free carrier absorption analysis to separate the contributions of crystalline grains and grain boundaries in relation to the orientation and microstructure. In addition, hydrogen plasma treatment was examined to improve the transport properties of undoped (400)-oriented poly-Si. (Author)
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.181-182.125