GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GaInP:Fe regrowth

The authors report the first results of a GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga sub(0.51)In sub(0.49)P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GalnP:Fe around 15 mu m diameter and 8 mu m tall VCSEL mesas was carried ou...

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Bibliographic Details
Published in:Electronics letters 2015-03, Vol.51 (2), p.1542-1544
Main Authors: Barrios, C Angulo, Messmer, E Rodriguez, Risberg, A, Carlsson, C, Halonen, J, Ghisoni, M, Larsson, A, Lourdudoss, S
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Continuous wave
Devices
Epitaxy
Gallium arsenide
Hydrides
Mesas
Threshold currents
Vapour
Vertical cavity surface emission lasers
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Summary:The authors report the first results of a GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga sub(0.51)In sub(0.49)P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GalnP:Fe around 15 mu m diameter and 8 mu m tall VCSEL mesas was carried out by hydride vapour phase epitaxy (HVPE). Linder room temperature continuous wave (CW) operation, the device exhibited a threshold current of 3.5 mA, a differential quantum efficiency of 33% and a light output power of 4.2 mW. CW operation at temperatures up to 97[degrees]C is also demonstrated.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20001082