Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures

The hardness of single-crystal gallium nitride at elevated temperatures is measured and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 N in the temperature range 20–1200°C. The average hardness was measured as...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-01, Vol.39 (3A), p.L200-L201
Main Authors: Yonenaga, Ichiro, Hoshi, Tetsuya, Usui, Akira
Format: Article
Language:English
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Summary:The hardness of single-crystal gallium nitride at elevated temperatures is measured and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 N in the temperature range 20–1200°C. The average hardness was measured as 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures, GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN is deduced.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L200