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A high-gain 50-GHz-band monolithic balanced gate mixer with an external IF balun
This paper presents a 90-GHz-band high-gain monolithic balanced gate mixer. IF impedance of the balanced gate mixer is approximated from a small-signal equivalent circuit, and conversion gain of the mixer is improved by using an external IF balun with high impedance-transforming ratio. The maximum c...
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Published in: | IEEE transactions on microwave theory and techniques 1998-06, Vol.46 (6), p.829-833 |
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container_end_page | 833 |
container_issue | 6 |
container_start_page | 829 |
container_title | IEEE transactions on microwave theory and techniques |
container_volume | 46 |
creator | Kawakami, K. Uehara, N. Matsuo, K. Kashiwa, T. Itoh, K. Isota, Y. Ishida, O. |
description | This paper presents a 90-GHz-band high-gain monolithic balanced gate mixer. IF impedance of the balanced gate mixer is approximated from a small-signal equivalent circuit, and conversion gain of the mixer is improved by using an external IF balun with high impedance-transforming ratio. The maximum conversion gain of 8.2 dB is achieved at LO power of 0 dBm. Effectiveness of the described mixer is confirmed experimentally. |
doi_str_mv | 10.1109/22.681207 |
format | article |
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Effectiveness of the described mixer is confirmed experimentally.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.681207</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit topology ; Filters ; HEMTs ; Impedance matching ; Millimeter wave circuits ; Millimeter wave communication ; Millimeter wave radar ; Millimeter wave technology ; Millimeter wave transistors ; Schottky diodes</subject><ispartof>IEEE transactions on microwave theory and techniques, 1998-06, Vol.46 (6), p.829-833</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c240t-c62ace0fb5f40b98604fcbd86c999bec615a9b0ede5f709914b63d5cbdacaf5f3</citedby><cites>FETCH-LOGICAL-c240t-c62ace0fb5f40b98604fcbd86c999bec615a9b0ede5f709914b63d5cbdacaf5f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/681207$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,54774</link.rule.ids></links><search><creatorcontrib>Kawakami, K.</creatorcontrib><creatorcontrib>Uehara, N.</creatorcontrib><creatorcontrib>Matsuo, K.</creatorcontrib><creatorcontrib>Kashiwa, T.</creatorcontrib><creatorcontrib>Itoh, K.</creatorcontrib><creatorcontrib>Isota, Y.</creatorcontrib><creatorcontrib>Ishida, O.</creatorcontrib><title>A high-gain 50-GHz-band monolithic balanced gate mixer with an external IF balun</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper presents a 90-GHz-band high-gain monolithic balanced gate mixer. IF impedance of the balanced gate mixer is approximated from a small-signal equivalent circuit, and conversion gain of the mixer is improved by using an external IF balun with high impedance-transforming ratio. The maximum conversion gain of 8.2 dB is achieved at LO power of 0 dBm. Effectiveness of the described mixer is confirmed experimentally.</description><subject>Circuit topology</subject><subject>Filters</subject><subject>HEMTs</subject><subject>Impedance matching</subject><subject>Millimeter wave circuits</subject><subject>Millimeter wave communication</subject><subject>Millimeter wave radar</subject><subject>Millimeter wave technology</subject><subject>Millimeter wave transistors</subject><subject>Schottky diodes</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqF0M9LwzAUB_AgCs7pwaunnAQPmS9p0ybHMdwPGOhBzyVJX7ZI186mw-lfb0fFq6fH4_vh8fgScsthwjnoRyEmmeIC8jMy4lLmTGc5nJMRAFdMpwouyVWM7_2aSlAj8jKl27DZso0JNZXAFstvZk1d0l1TN1XotsFRaypTOyzpxnRId-GILf3sI2pqiscO29pUdDU_uUN9TS68qSLe_M4xeZs_vc6WbP28WM2ma-ZECh1zmTAOwVvpU7BaZZB6Z0uVOa21RZdxabQFLFH6HLTmqc2SUvbEOOOlT8bkfri7b5uPA8au2IXosOpfxeYQC6ESkapc_Q9zKZMEdA8fBujaJsYWfbFvw860XwWH4lRuIUQxlNvbu8EGRPxzv-EP-6Zzxg</recordid><startdate>199806</startdate><enddate>199806</enddate><creator>Kawakami, K.</creator><creator>Uehara, N.</creator><creator>Matsuo, K.</creator><creator>Kashiwa, T.</creator><creator>Itoh, K.</creator><creator>Isota, Y.</creator><creator>Ishida, O.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>199806</creationdate><title>A high-gain 50-GHz-band monolithic balanced gate mixer with an external IF balun</title><author>Kawakami, K. ; Uehara, N. ; Matsuo, K. ; Kashiwa, T. ; Itoh, K. ; Isota, Y. ; Ishida, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c240t-c62ace0fb5f40b98604fcbd86c999bec615a9b0ede5f709914b63d5cbdacaf5f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Circuit topology</topic><topic>Filters</topic><topic>HEMTs</topic><topic>Impedance matching</topic><topic>Millimeter wave circuits</topic><topic>Millimeter wave communication</topic><topic>Millimeter wave radar</topic><topic>Millimeter wave technology</topic><topic>Millimeter wave transistors</topic><topic>Schottky diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kawakami, K.</creatorcontrib><creatorcontrib>Uehara, N.</creatorcontrib><creatorcontrib>Matsuo, K.</creatorcontrib><creatorcontrib>Kashiwa, T.</creatorcontrib><creatorcontrib>Itoh, K.</creatorcontrib><creatorcontrib>Isota, Y.</creatorcontrib><creatorcontrib>Ishida, O.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kawakami, K.</au><au>Uehara, N.</au><au>Matsuo, K.</au><au>Kashiwa, T.</au><au>Itoh, K.</au><au>Isota, Y.</au><au>Ishida, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A high-gain 50-GHz-band monolithic balanced gate mixer with an external IF balun</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1998-06</date><risdate>1998</risdate><volume>46</volume><issue>6</issue><spage>829</spage><epage>833</epage><pages>829-833</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper presents a 90-GHz-band high-gain monolithic balanced gate mixer. IF impedance of the balanced gate mixer is approximated from a small-signal equivalent circuit, and conversion gain of the mixer is improved by using an external IF balun with high impedance-transforming ratio. The maximum conversion gain of 8.2 dB is achieved at LO power of 0 dBm. Effectiveness of the described mixer is confirmed experimentally.</abstract><pub>IEEE</pub><doi>10.1109/22.681207</doi><tpages>5</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Journals |
subjects | Circuit topology Filters HEMTs Impedance matching Millimeter wave circuits Millimeter wave communication Millimeter wave radar Millimeter wave technology Millimeter wave transistors Schottky diodes |
title | A high-gain 50-GHz-band monolithic balanced gate mixer with an external IF balun |
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