ELECTRICAL PROPERTIES OF CRYSTALLINE Ta2O5 WITH Ru ELECTRODE

The dielectric constant of Ta2O5 was measured as a function of annealing temperature and, also, its dependence on film thickness was studied. The effect of postannealing, which was performed after forming a capacitor, on the leakage current of Ru/crystalline-Ta2O5/Ru capacitor was evaluated. Additio...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2094-2097. 2000 Part 1. Vol. 39, no. 4B, pp. 2094-2097. 2000, 2000, Vol.39 (4B), p.2094-2097
Main Authors: Kim, J-W, Nam, S-D, Lee, S-H, Won, S-J, Kim, W-D, Yoo, C-Y
Format: Article
Language:English
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Summary:The dielectric constant of Ta2O5 was measured as a function of annealing temperature and, also, its dependence on film thickness was studied. The effect of postannealing, which was performed after forming a capacitor, on the leakage current of Ru/crystalline-Ta2O5/Ru capacitor was evaluated. Additionally, the leakage current was investigated as a function of Ta2O5 film thickness. Through these experiments, a reliable Ta2O5 with a Ru electrode was obtained, which indicates that the Ru/crystalline-Ta2O5/Ru capacitor is a promising candidate for DRAMs of 4 Gbit and beyond. 18 refs.
ISSN:0021-4922
DOI:10.1143/jjap.39.2094