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Electrodeposition and characterisation of CdTe films for solar cell applications
Thin film CdS/CdTe solar cells have been prepared by electrodeposition of CdTe on CdS coated conducting glass from an acidic electrolyte containing a high concentration of Cd 2+ and a low concentration of TeO 2. Deposition of a 2 μm CdTe film from stirred solutions typically requires 3 h. High quali...
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Published in: | Electrochimica acta 2000-06, Vol.45 (20), p.3355-3365 |
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creator | Duffy, N.W Peter, L.M Wang, R.L Lane, D.W Rogers, K.D |
description | Thin film CdS/CdTe solar cells have been prepared by electrodeposition of CdTe on CdS coated conducting glass from an acidic electrolyte containing a high concentration of Cd
2+ and a low concentration of TeO
2. Deposition of a 2 μm CdTe film from stirred solutions typically requires 3 h. High quality CdTe films have been grown much more rapidly using a channel flow cell: 2 μm films were deposited in around 24 min. The CdTe|CdS thin film structures obtained in this way were characterised by photocurrent spectroscopy, electrolyte electroreflectance/absorbance spectroscopy (EER/A), XRD and AFM. CdS|CdTe films prepared by both methods were annealed at 415°C to effect type conversion of the CdTe layer. As deposited CdTe is generally n-type and exhibits strong preferential 〈111〉 orientation. Type conversion is not necessarily accompanied by recrystallisation: most of the CdTe films deposited from stirred solution did not recrystallise. Recrystallisation did occur for films grown by pulsing the potential periodically from 50 mV to>350 mV versus Cd
2+/Cd during deposition. Evidence for sulphur and tellurium diffusion leading to alloy formation during annealing was obtained from bandgap shifts detected by photocurrent spectroscopy and EER/A and from changes in lattice parameters measured by XRD. The composition of the annealed electrodeposited structures approached CdS
0.95Te
0.05|CdTe
0.95S
0.05 after 15 min. Test solar cells with AM 1.5 efficiencies approaching 6% were fabricated. Recrystallised samples gave higher solar cell efficiencies than non-recrystallised samples. |
doi_str_mv | 10.1016/S0013-4686(00)00409-6 |
format | article |
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2+ and a low concentration of TeO
2. Deposition of a 2 μm CdTe film from stirred solutions typically requires 3 h. High quality CdTe films have been grown much more rapidly using a channel flow cell: 2 μm films were deposited in around 24 min. The CdTe|CdS thin film structures obtained in this way were characterised by photocurrent spectroscopy, electrolyte electroreflectance/absorbance spectroscopy (EER/A), XRD and AFM. CdS|CdTe films prepared by both methods were annealed at 415°C to effect type conversion of the CdTe layer. As deposited CdTe is generally n-type and exhibits strong preferential 〈111〉 orientation. Type conversion is not necessarily accompanied by recrystallisation: most of the CdTe films deposited from stirred solution did not recrystallise. Recrystallisation did occur for films grown by pulsing the potential periodically from 50 mV to>350 mV versus Cd
2+/Cd during deposition. Evidence for sulphur and tellurium diffusion leading to alloy formation during annealing was obtained from bandgap shifts detected by photocurrent spectroscopy and EER/A and from changes in lattice parameters measured by XRD. The composition of the annealed electrodeposited structures approached CdS
0.95Te
0.05|CdTe
0.95S
0.05 after 15 min. Test solar cells with AM 1.5 efficiencies approaching 6% were fabricated. Recrystallised samples gave higher solar cell efficiencies than non-recrystallised samples.</description><identifier>ISSN: 0013-4686</identifier><identifier>EISSN: 1873-3859</identifier><identifier>DOI: 10.1016/S0013-4686(00)00409-6</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Cadmium telluride ; Electroabsorbance ; Electrodeposition ; Electroreflectance ; Flow cell ; Photocurrent ; Solar cells ; Sulfur diffusion</subject><ispartof>Electrochimica acta, 2000-06, Vol.45 (20), p.3355-3365</ispartof><rights>2000 Elsevier Science Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-c9bed45c78d545b794ad18f149af5c3b03defd68b6779c84592d6d77cb66cbf83</citedby><cites>FETCH-LOGICAL-c338t-c9bed45c78d545b794ad18f149af5c3b03defd68b6779c84592d6d77cb66cbf83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Duffy, N.W</creatorcontrib><creatorcontrib>Peter, L.M</creatorcontrib><creatorcontrib>Wang, R.L</creatorcontrib><creatorcontrib>Lane, D.W</creatorcontrib><creatorcontrib>Rogers, K.D</creatorcontrib><title>Electrodeposition and characterisation of CdTe films for solar cell applications</title><title>Electrochimica acta</title><description>Thin film CdS/CdTe solar cells have been prepared by electrodeposition of CdTe on CdS coated conducting glass from an acidic electrolyte containing a high concentration of Cd
2+ and a low concentration of TeO
2. Deposition of a 2 μm CdTe film from stirred solutions typically requires 3 h. High quality CdTe films have been grown much more rapidly using a channel flow cell: 2 μm films were deposited in around 24 min. The CdTe|CdS thin film structures obtained in this way were characterised by photocurrent spectroscopy, electrolyte electroreflectance/absorbance spectroscopy (EER/A), XRD and AFM. CdS|CdTe films prepared by both methods were annealed at 415°C to effect type conversion of the CdTe layer. As deposited CdTe is generally n-type and exhibits strong preferential 〈111〉 orientation. Type conversion is not necessarily accompanied by recrystallisation: most of the CdTe films deposited from stirred solution did not recrystallise. Recrystallisation did occur for films grown by pulsing the potential periodically from 50 mV to>350 mV versus Cd
2+/Cd during deposition. Evidence for sulphur and tellurium diffusion leading to alloy formation during annealing was obtained from bandgap shifts detected by photocurrent spectroscopy and EER/A and from changes in lattice parameters measured by XRD. The composition of the annealed electrodeposited structures approached CdS
0.95Te
0.05|CdTe
0.95S
0.05 after 15 min. Test solar cells with AM 1.5 efficiencies approaching 6% were fabricated. Recrystallised samples gave higher solar cell efficiencies than non-recrystallised samples.</description><subject>Cadmium telluride</subject><subject>Electroabsorbance</subject><subject>Electrodeposition</subject><subject>Electroreflectance</subject><subject>Flow cell</subject><subject>Photocurrent</subject><subject>Solar cells</subject><subject>Sulfur diffusion</subject><issn>0013-4686</issn><issn>1873-3859</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqFkMtKAzEUhoMoWKuPIGQluhg9aa6zEin1AgUF6zpkcsHIdDImU8G3d9qKW1cHDt__c86H0DmBawJE3LwCEFoxocQlwBUAg7oSB2hClKQVVbw-RJM_5BidlPIBAFJImKCXRevtkJPzfSpxiKnDpnPYvpts7OBzLGa3TAHP3crjENt1wSFlXFJrMra-bbHp-zbaHVhO0VEwbfFnv3OK3u4Xq_ljtXx-eJrfLStLqRoqWzfeMW6lcpzxRtbMOKICYbUJ3NIGqPPBCdUIKWurGK9nTjgpbSOEbYKiU3Sx7-1z-tz4Muh1LNtrTOfTpuiZ5FwBm40g34M2p1KyD7rPcW3ytyagt_70zp_eytEAeudPizF3u8_58Yuv6LMuNvrOehfzqEy7FP9p-AGBpXjq</recordid><startdate>20000601</startdate><enddate>20000601</enddate><creator>Duffy, N.W</creator><creator>Peter, L.M</creator><creator>Wang, R.L</creator><creator>Lane, D.W</creator><creator>Rogers, K.D</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20000601</creationdate><title>Electrodeposition and characterisation of CdTe films for solar cell applications</title><author>Duffy, N.W ; Peter, L.M ; Wang, R.L ; Lane, D.W ; Rogers, K.D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-c9bed45c78d545b794ad18f149af5c3b03defd68b6779c84592d6d77cb66cbf83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Cadmium telluride</topic><topic>Electroabsorbance</topic><topic>Electrodeposition</topic><topic>Electroreflectance</topic><topic>Flow cell</topic><topic>Photocurrent</topic><topic>Solar cells</topic><topic>Sulfur diffusion</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Duffy, N.W</creatorcontrib><creatorcontrib>Peter, L.M</creatorcontrib><creatorcontrib>Wang, R.L</creatorcontrib><creatorcontrib>Lane, D.W</creatorcontrib><creatorcontrib>Rogers, K.D</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electrochimica acta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Duffy, N.W</au><au>Peter, L.M</au><au>Wang, R.L</au><au>Lane, D.W</au><au>Rogers, K.D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrodeposition and characterisation of CdTe films for solar cell applications</atitle><jtitle>Electrochimica acta</jtitle><date>2000-06-01</date><risdate>2000</risdate><volume>45</volume><issue>20</issue><spage>3355</spage><epage>3365</epage><pages>3355-3365</pages><issn>0013-4686</issn><eissn>1873-3859</eissn><abstract>Thin film CdS/CdTe solar cells have been prepared by electrodeposition of CdTe on CdS coated conducting glass from an acidic electrolyte containing a high concentration of Cd
2+ and a low concentration of TeO
2. Deposition of a 2 μm CdTe film from stirred solutions typically requires 3 h. High quality CdTe films have been grown much more rapidly using a channel flow cell: 2 μm films were deposited in around 24 min. The CdTe|CdS thin film structures obtained in this way were characterised by photocurrent spectroscopy, electrolyte electroreflectance/absorbance spectroscopy (EER/A), XRD and AFM. CdS|CdTe films prepared by both methods were annealed at 415°C to effect type conversion of the CdTe layer. As deposited CdTe is generally n-type and exhibits strong preferential 〈111〉 orientation. Type conversion is not necessarily accompanied by recrystallisation: most of the CdTe films deposited from stirred solution did not recrystallise. Recrystallisation did occur for films grown by pulsing the potential periodically from 50 mV to>350 mV versus Cd
2+/Cd during deposition. Evidence for sulphur and tellurium diffusion leading to alloy formation during annealing was obtained from bandgap shifts detected by photocurrent spectroscopy and EER/A and from changes in lattice parameters measured by XRD. The composition of the annealed electrodeposited structures approached CdS
0.95Te
0.05|CdTe
0.95S
0.05 after 15 min. Test solar cells with AM 1.5 efficiencies approaching 6% were fabricated. Recrystallised samples gave higher solar cell efficiencies than non-recrystallised samples.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0013-4686(00)00409-6</doi><tpages>11</tpages></addata></record> |
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source | ScienceDirect Journals |
subjects | Cadmium telluride Electroabsorbance Electrodeposition Electroreflectance Flow cell Photocurrent Solar cells Sulfur diffusion |
title | Electrodeposition and characterisation of CdTe films for solar cell applications |
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