Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires

Antimonide-based ternary IIIV nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.31.55 m spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) subs...

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Published in:Physical chemistry chemical physics : PCCP 2023-01, Vol.25 (2), p.1248-1256
Main Authors: Kang, Yubin, Lin, Fengyuan, Tang, Jilong, Dai, Qian, Hou, Xiaobing, Meng, Bingheng, Wang, Dongyue, Wang, Le, Wei, Zhipeng
Format: Article
Language:English
Subjects:
Electron microscopy
Emission spectra
Epitaxial growth
Gallium arsenide
Microscopy
Molecular beam epitaxy
Morphology
Nanowires
Optical communication
Optical properties
Photoluminescence
Quantum wells
Raman spectroscopy
Self-assembly
Silicon substrates
Spectrum analysis
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Summary:Antimonide-based ternary IIIV nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.31.55 m spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) substrates by molecular beam epitaxy (MBE). In addition, the morphologies and tunable wavelengths of the GaAs/Ga(As)Sb/GaAs SQWs were adjusted by interrupting the Ga droplets and changing the growth temperatures and V/III ratios. The four morphologies of the GaAs/Ga(As)Sb/GaAs SQW NWs were observed by scanning electron microscopy (SEM). The microscale lattice structure related to the incorporation of Sb in GaAs/Ga(As)Sb/GaAs SQWs was studied by Raman spectroscopy. The crystal quality of the GaAs/Ga(As)Sb/GaAs SQW NWs was researched by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the optical properties of the GaAs/Ga(As)Sb/GaAs SQWs were investigated by photoluminescence (PL) spectroscopy. The PL spectra showed the peak emission wavelength range of 818 nm (GaAs) to 1628 nm (GaSb) at 10 K. This study provides an approach to enhance the effective control of the morphology, structure and wavelength of quantum well or coreshell NWs. Four GaAs/Ga(As)Sb/GaAs SQW NWs with different morphologies and photon energies from 1.323 eV to 0.762 eV were achieved.
ISSN:1463-9076
1463-9084
DOI:10.1039/d2cp04630j