Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires

• Published in: Physical chemistry chemical physics : PCCP 2023-01, Vol.25 (2), p.1248-1256
• Main Authors: Kang, Yubin, Lin, Fengyuan, Tang, Jilong, Dai, Qian, Hou, Xiaobing, Meng, Bingheng, Wang, Dongyue, Wang, Le, Wei, Zhipeng
• Format: Article
• Language: English
• Subjects: Electron microscopy; Emission spectra; Epitaxial growth; Gallium arsenide; Microscopy; Molecular beam epitaxy; Morphology; Nanowires; Optical communication; Optical properties; Photoluminescence; Quantum wells; Raman spectroscopy; Self-assembly; Silicon substrates; Spectrum analysis
• ISSN: 1463-9076; 1463-9084
• DOI: 10.1039/d2cp04630j

Antimonide-based ternary IIIV nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.31.55 m spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) substrates by molecular beam epitaxy (MBE). In addition, the morphologies and tunable wavelengths of the GaAs/Ga(As)Sb/GaAs SQWs were adjusted by interrupting the Ga droplets and changing the growth temperatures and V/III ratios. The four morphologies of the GaAs/Ga(As)Sb/GaAs SQW NWs were observed by scanning electron microscopy (SEM). The microscale lattice structure related to the incorporation of Sb in GaAs/Ga(As)Sb/GaAs SQWs was studied by Raman spectroscopy. The crystal quality of the GaAs/Ga(As)Sb/GaAs SQW NWs was researched by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the optical properties of the GaAs/Ga(As)Sb/GaAs SQWs were investigated by photoluminescence (PL) spectroscopy. The PL spectra showed the peak emission wavelength range of 818 nm (GaAs) to 1628 nm (GaSb) at 10 K. This study provides an approach to enhance the effective control of the morphology, structure and wavelength of quantum well or coreshell NWs. Four GaAs/Ga(As)Sb/GaAs SQW NWs with different morphologies and photon energies from 1.323 eV to 0.762 eV were achieved.