Electrochemical deposition of metals onto silicon

The general concepts governing the electrochemical deposition of metal films onto semiconductors are discussed. Deposition onto semiconductor surfaces is complicated due to the band structure of the semiconductor, which affects both the thermodynamics and the kinetics of metal deposition processes....

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 1998-08, Vol.31 (16), p.1927-1949
Main Authors: Oskam, G, Long, J G, Natarajan, A, Searson, P C
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electrodeposition, electroplating
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:The general concepts governing the electrochemical deposition of metal films onto semiconductors are discussed. Deposition onto semiconductor surfaces is complicated due to the band structure of the semiconductor, which affects both the thermodynamics and the kinetics of metal deposition processes. The influence of the potential distribution at the semiconductor/solution interface on the charge transfer mechanisms involved in deposition of metals is discussed. Models for electrochemical nucleation and growth are described and the influence of the unique physical properties of semiconductors is analyzed. Finally, we present recent results for electrochemical deposition of gold, copper and platinum onto n-type silicon.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/31/16/001