Influence of deposition conditions of La-doped YbBa2Cu3Oy upper layers on electrical properties of interface-modified ramp-edge junction

Authors fabricated interface-modified ramp-edge junctions with sputtered La-doped YBa2Cu3Oy (La-YBCO) and La-doped YbBa2Cu3Oy (La-YbBCO) by PLD as base and counter-layers, resp. The influences of deposition parameters for the La-YbBCO counter-layers on the electrical properties and Ic spread of the...

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Published in:Physica. C, Superconductivity Superconductivity, 2002-10, Vol.378-381, p.1353-1356
Main Authors: Wakana, H, Adachi, S, Horibe, M, Ishimaru, Y, Horibe, O, Tarutani, Y, Tanabe, K
Format: Article
Language:English
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Summary:Authors fabricated interface-modified ramp-edge junctions with sputtered La-doped YBa2Cu3Oy (La-YBCO) and La-doped YbBa2Cu3Oy (La-YbBCO) by PLD as base and counter-layers, resp. The influences of deposition parameters for the La-YbBCO counter-layers on the electrical properties and Ic spread of the junctions are investigated. Junctions with resistively and capacitively shunted junction-like I-V characteristics and a typical IcRn of 2-3 mV at 4.2 K can be fabricated in the substrate temperature range of 640-700 C. By optimizing the deposition parameters including the target-substrate distance, a 1s spread in Ic as small as 8.7% is obtained for 25-junction series array. 13 refs.
ISSN:0921-4534
DOI:10.1016/S0921-4534(02)01713-6