An offset cancellation bit-line sensing scheme for low-voltage DRAM applications

Offset-cancellation provides low-voltage DRAM operation. The offset cancelling bit-line sense amplifers are pitch-matched to the conventional 0.16 mu m DRAM cell array without process modifications. Results indicate better refresh characteristics than conventional bit-line sense amplifiers even at 1...

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Bibliographic Details
Published in:Digest of technical papers - IEEE International Solid-State Circuits Conference 2002-01, p.116-117+427
Main Authors: Hong, Sang Hoon, Kim, Si Hong, Kim, Se Jun, Wee, Jae-Kyung, Chung, Jin Yong
Format: Article
Language:English
Online Access:Get full text
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Summary:Offset-cancellation provides low-voltage DRAM operation. The offset cancelling bit-line sense amplifers are pitch-matched to the conventional 0.16 mu m DRAM cell array without process modifications. Results indicate better refresh characteristics than conventional bit-line sense amplifiers even at 1.5 V.
ISSN:0193-6530