An accurate photonic capacitance model for GaAs MESFETs

A new set of pseudoempirical equations is presented in order to simulate the optical and bias dependencies of GaAs MESFET junction capacitances, which is valid for the whole I-V plane. The variations induced in the small-signal equivalent circuit by the optical illumination are extracted from on-waf...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2002-04, Vol.50 (4), p.1193-1197
Main Authors: Navarro, C., Zamanillo, J.-M., Sanchez, A.M., Puente, A.T., Garcia, J.L., Lomer, M., Lopez-Higuera, J.M.
Format: Article
Language:English
Subjects:
Bias
Capacitance
Circuit simulation
Computer simulation
Equations
Equivalent circuits
Gallium arsenide
Gallium arsenides
Integrated circuit modeling
Mathematical models
MESFETs
Microwaves
Optical scattering
Photonic integrated circuits
Photonics
Scattering parameters
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Summary:A new set of pseudoempirical equations is presented in order to simulate the optical and bias dependencies of GaAs MESFET junction capacitances, which is valid for the whole I-V plane. The variations induced in the small-signal equivalent circuit by the optical illumination are extracted from on-wafer scattering parameter measurements. New linear and quasi-logarithmic variations versus the incident optical power are shown for gate-drain and gate-source (Cgd and Cgs) capacitances. Furthermore, experimental results are in very good agreement with the simulated values for a wide range of optical power and bias conditions. Large signal MESFET models show a better fit with measured S-parameters than those previously published, leading to a greater degree of confidence in the design of photonic monolithic microwave integrated circuits.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.993424